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| SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A KTA1045D/L EPITAXIAL PLANAR PNP TRANSISTOR I J High breakdown voltage VCEO 120V, high current 1A. Low saturation voltage and good linearity of hFE. Complementary to KTC2025D/L Q K B M E D FEATURES C H F 1 2 F 3 P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -120 -120 -5 -1 -2 1.0 8 150 -55 150 UNIT V V V A 1. BASE 2. COLLECTOR 3. EMITTER DPAK A C I J D O K W H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut of Current Emitter Cut of Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn-on Time Switching Time Turn-off Time Storage Time (Note) : hFE(1) Classification ) TEST CONDITION VCB=-50V, IE=0 VEB=-4V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 VCE=-5V, IC=-50mA VCE=-5V, IC=-500mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA 1 20sec 100 1uF 1uF I B2 I B1 24 IPAK SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) Note hFE(2) fT Cob VCE(sat) VBE(sat) ton toff tstg MIN. -120 -120 -5 100 20 - TYP. 110 30 -0.15 -0.85 80 100 600 MAX. -1 -1 320 -0.4 -1.2 - UNIT A A V V V MHz pF V V nS 2V -12V VCE =-12V I C =10I B1 =-10I B2 =500mA Y:100 200, GR:160 320 2003. 3. 27 Revision No : 5 1/2 KTA1045D/L VCE - I C -1.6 COLLECTOR CURRENT I C (A) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) Tc=25 C -20 -15 -12 -8 -6 -4 -2 I B =0mA -10 VCE(sat) - I C -1.0 -0.5 -0.3 I C /I B =10 -0.1 -0.05 -0.03 -1 -2 -3 -4 -5 -6 COLLECTOR-EMITTER VOLTAGE VCE (V) -0.01 -1 -3 -10 -30 -100 -300 -1k -3k VBE - I C COLLECTOR CURRENT I C (A) -1.4 -1.2 -1.0 -0.8 -0.6 COLLECTOR DISSIPATION PC (W) -0.4 -0.2 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMITTER VOLTAGE V BE (V) -1.2 10 8 6 4 2 0 1 COLLECTOR CURRENT I C (mA) VCE =-5V Pc - Ta 1 Tc=25 C 2 Ta=25 C C ob - VCB OUTPUT CAPACITANCE C ob (pF) 200 f=1MHz 100 50 30 2 0 20 40 60 80 100 120 140 160 AMBIENT TMMPERATURE Ta ( C) 10 5 5 -1 -3 -10 -30 -100 COLLECTOR-BASE VOLTAGE V CE (V) SAFE OPERATING AREA COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 I C MAX.(PULSED) * I C MAX. (CONTINUOUS) 10 0 1m S* DC 10 S O m* Tc PER S* =2 A TI 5 C ON h FE - I C 500 DC CURRENT GAIN hFE 300 VCE =-5V 100 50 30 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 10 -1 -3 -10 -30 -100 -300 -1k -5k 1 10 100 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 5 2/2 |
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